Close packing and isostructuralism of analogous Ph3X-X'R3compounds (R= Me:X= Si, Ge, Si, Ge, Sn, Ge,X' = Si, Si, Ge, Ge, Ge, Sn;R= Et:X= Ge, Si;X'= Si, Ge andR= Ph:X= Ge, Ge, Sn, Pb;X' = Ge, Pb, Pb, Pb)
نویسندگان
چکیده
منابع مشابه
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
Although epitaxial growth has been traditionally monitored by reciprocal space techniques, such as reflection highenergy electron diffraction (RHEED), the development of surface-sensitive imaging techniques, such as scanning tunneling microscopy (STM), allows for monitoring in the real-space. RHEED averages information over relatively large sample regions, and is thus more representative of the...
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The Stranski-Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electr...
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The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on th...
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For Ge films on (001)and (111)-Si the energy of coherent and semicoherent interfaces with misfit dislocations is numerically analyzed by use of the atomistic, anharmonic bond charge model. The model describes correctly the elastic properties of the Ge film and the Si substrate, the bond angle stiffness reduction for short wavelength deformations as found in the dislocation cores, and the third ...
متن کاملStructure, strain and stability of ultra-thin Ge layers in Si/Ge/Si axial heterojunction nanowires
The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 1993
ISSN: 0108-7673
DOI: 10.1107/s0108767378094039